siliconworld

Silicon World

1 Years ago
Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

We have characterized highly conductive Si-doped GaN films with a high electron mobility of 112 cm2V−1s−1 at an electron concentration of 2.9 × 1020 cm−3, prepared using pulsed sputtering deposition (PSD). With an increase in the doping concentration, the absorption edge was found to shift toward a higher energy level, owing to the Burstein-Moss effect, thus making this material suitable for the transparent conductive tunne..

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