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Direct band-gap crossover in epitaxial monolayer boron nitride
- June 18, 2019
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Insulating hexagonal boron nitride (hBN) is theoretically expected to undergo a crossover to a direct bandgap in the monolayer limit. Here, the authors perform optical spectroscopy measurements on atomically thin epitaxial hBN providing indications of the presence of a direct gap of energy 6.1âeV in the single atomic layer.
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"Direct band-gap crossover in epitaxial monolayer boron nitride", MachPrinciple, June 18, 2019, https://machprinciple.com/post/Direct-band-gap-crossover-in-epitaxial-monolayer-boron-nitride
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